Tantalum sputtering target

摘要

Provided is a tantalum sputtering target, in which 1 mass ppm or more and 50 mass ppm or less of boron is contained as an essential component, and of which the purity excluding boron and gas components is 99.998% or higher. Thereby obtained is a high-purity tantalum sputtering target having a uniform and fine structure and enabling plasma stabilization and achievement of superior film evenness (uniformity).

主权项

1. A tantalum sputtering target, consisting of 1 mass ppm or more and 50 mass ppm or less of boron and tantalum of a purity, excluding boron and gas components, of 99.998% or higher.