Uniformity tuning capable ESC grounding kit for RF PVD chamber

摘要

Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically, embodiments described herein relate to a grounding kit which creates an asymmetric grounding path selected to significantly reduce the asymmetries caused by an off center RF power delivery.

主权项

1. A processing chamber, comprising:
a chamber body; a target disposed on the chamber body; an RF power feed coupled to the target in a position that produces an RF power delivery asymmetry; a substrate support electrically coupled the chamber body, the substrate support moveable between raised and lowered positions; a shield surrounding the target and the substrate support; and a grounding kit coupled to and moveable with the substrate support; the grounding kit having conductors positioned to provide an asymmetrical ground path between the shield and the substrate support when the substrate support is in the raised position and not to contact the shield when the substrate support is in the lowered position, the position of the conductors selected to compensate for the power delivery asymmetry.