发明名称 Process for production of silicon-carbide-coated carbon base material, silicon-carbide-coated carbon base material, sintered (silicon carbide)-carbon complex, ceramic-coated sintered (silicon carbide)-carbon complex, and process for production of sintered (silicon carbide)-carbon complex
摘要 Produced is a silicon carbide-coated carbon base material in which a silicon carbide coating is densely and uniformly formed on the surface of a carbon base material, such as graphite. A production process includes the steps of: preparing a carbon base material the surface of which has basal plane sites of an SP2 carbon structure with no dangling bond and edge plane sites of an SP2 carbon structure with a dangling bond; and reacting the surface of the carbon base material with SiO gas in an atmosphere at a temperature of 1400° C. to 1600° C. and a pressure of 1 to 150 Pa to form silicon carbide, whereby the carbon base material coated with silicon carbide is produced.
申请公布号 US9085493(B2) 申请公布日期 2015.07.21
申请号 US201013392593 申请日期 2010.09.01
申请人 Toyo Tanso Co., Ltd. 发明人 Nakamura Masaharu;Miyamoto Yoshinari;Tojo Tetsuro
分类号 B32B5/16;C04B35/575;C04B35/645;C04B41/00;B82Y30/00;C04B35/52;C04B35/626;C04B35/628;C04B41/50;C04B41/87;C23C14/06;C01B31/36;C04B111/00 主分类号 B32B5/16
代理机构 Keating & Bennett, LLP 代理人 Keating & Bennett, LLP
主权项 1. A pressure sintered silicon carbide/carbon complex obtained by pressure sintering carbon base material particles coated with a layer of silicon carbide, wherein the relative density of the pressure sintered silicon carbide/carbon complex is 90% to 100% and the total content of Al, Be, B, and Se therein is below 0.1% by weight; and wherein a silicon carbide interfacial layer is disposed around the carbon base material particles and provided continuously in the form of a three-dimensional network.
地址 Osaka JP