发明名称 |
Process for production of silicon-carbide-coated carbon base material, silicon-carbide-coated carbon base material, sintered (silicon carbide)-carbon complex, ceramic-coated sintered (silicon carbide)-carbon complex, and process for production of sintered (silicon carbide)-carbon complex |
摘要 |
Produced is a silicon carbide-coated carbon base material in which a silicon carbide coating is densely and uniformly formed on the surface of a carbon base material, such as graphite. A production process includes the steps of: preparing a carbon base material the surface of which has basal plane sites of an SP2 carbon structure with no dangling bond and edge plane sites of an SP2 carbon structure with a dangling bond; and reacting the surface of the carbon base material with SiO gas in an atmosphere at a temperature of 1400° C. to 1600° C. and a pressure of 1 to 150 Pa to form silicon carbide, whereby the carbon base material coated with silicon carbide is produced. |
申请公布号 |
US9085493(B2) |
申请公布日期 |
2015.07.21 |
申请号 |
US201013392593 |
申请日期 |
2010.09.01 |
申请人 |
Toyo Tanso Co., Ltd. |
发明人 |
Nakamura Masaharu;Miyamoto Yoshinari;Tojo Tetsuro |
分类号 |
B32B5/16;C04B35/575;C04B35/645;C04B41/00;B82Y30/00;C04B35/52;C04B35/626;C04B35/628;C04B41/50;C04B41/87;C23C14/06;C01B31/36;C04B111/00 |
主分类号 |
B32B5/16 |
代理机构 |
Keating & Bennett, LLP |
代理人 |
Keating & Bennett, LLP |
主权项 |
1. A pressure sintered silicon carbide/carbon complex obtained by pressure sintering carbon base material particles coated with a layer of silicon carbide,
wherein the relative density of the pressure sintered silicon carbide/carbon complex is 90% to 100% and the total content of Al, Be, B, and Se therein is below 0.1% by weight; and wherein a silicon carbide interfacial layer is disposed around the carbon base material particles and provided continuously in the form of a three-dimensional network. |
地址 |
Osaka JP |