Semiconductor structure and method for manufacturing the same

摘要

A semiconductor structure and a method for manufacturing the same are provided. The method comprises following steps. A first silicon-containing conductive material is formed on a substrate. A second silicon-containing conductive material is formed on the first silicon-containing conductive material. The first silicon-containing conductive material and the second silicon-containing conductive material have different dopant conditions. The first silicon-containing conductive material and the second silicon-containing conductive material are thermally oxidized for turning the first silicon-containing conductive material wholly into an insulating oxide structure, and the second silicon-containing conductive material into a silicon-containing conductive structure and an insulating oxide layer.

主权项

1. A semiconductor structure, comprising:
a substrate; an insulating oxide structure formed on the substrate; and a plurality of silicon-containing conductive structures separated from each other by the insulating oxide structure and each of the silicon-containing conductive structures is functioned as a bit line (BL), wherein at least one of the insulating oxide structure and the silicon-containing conductive structure has a bird's beak profile, each of the insulating oxide structures has a contacting end contacting to the insulating structure, and the bird's beak profile forms a decreasing width toward the contacting end in the insulating oxide structure and the silicon-containing conductive structure.