| 发明名称 | Hybrid memory | ||
| 摘要 | A two-switch hybrid memory cell device includes a storage node connected between one terminal of a first switch and a gate of a second switch. The device also includes a resistive switching device connected to the storage node. The resistive switching device is to act as a capacitance by being set to a high resistive state when the memory cell is in a dynamic mode. | ||
| 申请公布号 | US9087577(B2) | 申请公布日期 | 2015.07.21 |
| 申请号 | US201213725733 | 申请日期 | 2012.12.21 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Ting Yu-Wei;Tsai Chun-Yang;Huang Kuo-Ching |
| 分类号 | G11C13/00;G11C14/00 | 主分类号 | G11C13/00 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A two-switch hybrid memory cell device comprising: a storage node connected between one terminal of a first switch and a gate of a second switch, the first switch also being connected to a write bit line, and the second switch being connected to a read bit line; and a resistive switching device connected between the storage node and a select line, the select line not in direct connection with the second switch; wherein the resistive switching device is to act as a capacitance by being set to a high resistive state when the memory cell is in a dynamic mode. | ||
| 地址 | Hsin-Chu TW | ||