| 发明名称 | Lithographic method | ||
| 摘要 | A lithographic method is disclosed that includes, on a substrate provided with a layer of a resist and a further layer of a material provided on the layer of resist, providing a pattern in the further layer, the pattern defining a space via which an area of the layer of resist may be exposed to radiation, a distance between features of the pattern defining the space, and exposing the layer of resist to radiation having a wavelength greater than the distance between features of the pattern defining the space, such that near-field radiation is generated which propagates into and exposes an area of the resist. | ||
| 申请公布号 | US9086633(B2) | 申请公布日期 | 2015.07.21 |
| 申请号 | US200912463679 | 申请日期 | 2009.05.11 |
| 申请人 | ASML HOLDING N.V. | 发明人 | Flagello Donis George |
| 分类号 | H01L21/3105;H01L21/312;G03F7/40;G03F7/095;G03F7/12;G03F7/20 | 主分类号 | H01L21/3105 |
| 代理机构 | Pillsbury Winthrop Shaw Pittman LLP | 代理人 | Pillsbury Winthrop Shaw Pittman LLP |
| 主权项 | 1. A lithographic method comprising, on a substrate provided with a layer of a resist, and a further layer of a material provided on the layer of resist: providing a pattern in the further layer, the pattern defining a space via which an area of the layer of resist may be exposed to a radiation having a wavelength, a distance between features of the pattern defining the space and the material of the further layer is optically opaque to the radiation; and exposing the area of resist to the radiation, wherein the wavelength of the radiation is greater than the distance between features of the pattern defining the space, such that near-field radiation is generated which propagates into and exposes at least a portion of the area of the resist sufficiently to meet or exceed an exposure intensity threshold of the resist. | ||
| 地址 | Veldhoven NL | ||