EUV resist sensitivity reduction

摘要

A method for patterning a substrate is described. The method includes forming a layer of radiation-sensitive material on a substrate, and preparing a pattern in the layer of radiation-sensitive material using a lithographic process, wherein the pattern is characterized by a critical dimension (CD) and a roughness. Following the preparation of the pattern in the layer of radiation-sensitive material, the method further includes performing a CD slimming process to reduce the CD to a reduced CD, and performing a vapor smoothing process to reduce the roughness to a reduced roughness.

主权项

1. A method for patterning a substrate, comprising:
providing a substrate having a layer of extreme ultra violet (EUV) resist characterized by a target critical dimension (CD); selecting a target CD for a pattern to be formed in said layer of EUV resist; selecting a target exposure dose for exposing said layer of EUV resist to EUV radiation to achieve said target CD in said layer of EUV resist; exposing said layer of EUV resist to said EUV radiation at a first exposure dose less than said target exposure dose and developing said layer of EUV resist to achieve said pattern with a first CD larger than said target CD, said pattern having a first roughness; performing a CD slimming process to reduce said first CD to a second CD, said second CD being substantially equivalent to said target CD; and performing, optionally, a smoothing process to reduce said first roughness to a second roughness.