Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, manufacturing method of electronic device, and electronic device

摘要

A pattern forming method contains: (i) a step of forming a bottom anti-reflective coating on a substrate by using a first resin composition (I), (ii) a step of forming a resist film on the bottom anti-reflective coating by using a second resin composition (II), (iii) a step of exposing a multi-layered film having the bottom anti-reflective coating and the resist film, and (iv) a step of developing the bottom anti-reflective coating and the resist film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

主权项

1. A pattern forming method comprising:
(i) a step of forming a bottom anti-reflective coating on a substrate by using a first resin composition (I), (ii) a step of forming a resist film on the bottom anti-reflective coating by using a second resin composition (II), (iii) a step of exposing a multi-layered film having the bottom anti-reflective coating and the resist film, and (iv) a step of developing the bottom anti-reflective coating and the resist film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern, wherein the first resin composition (I) contains a first resin capable of increasing the polarity by the action of an acid to decrease the solubility for an organic solvent-containing developer, the second resin composition (II) contains a second resin capable of increasing the polarity by the action of an acid to decrease the solubility for an organic solvent-containing developer, at least either one of the first resin composition (I) and the second resin composition (II) contains a compound capable of generating an acid upon irradiation with an actinic ray or radiation, the first resin in the first resin composition (I) is a resin containing a repeating unit having an aromatic ring or the first resin composition (I) further contains an aromatic compound, and an amount of the organic solvent used in the organic developer in step (iv) is from 90 to 100 mass%, based on the entire amount of the developer.