Semiconductor device

摘要

A semiconductor device comprising: an active layer, which has a composition represented by the formula: AlxMyGa1-x-yN, wherein x satisfies 0≦x≦1, wherein y satisfies 0≦y≦1, wherein x+y satisfies 0≦x+y≦1, and wherein M contains at least one of In and B; a substrate containing GaN; and a buffer layer provided between the active layer and the substrate, wherein the semiconductor device is operated by electrical current flowing through the active layer in a direction parallel to a face of the substrate, wherein the buffer layer has a composition represented by the formula: AlpIn1-pN, wherein p satisfies 0≦p<1, and wherein the buffer layer, which has a band gap energy wider than that of the substrate, and which is lattice-matched to the substrate.

主权项

1. A semiconductor device comprising:
an active layer, which has a composition represented by the formula:
AlxMyGa1-x-yN,wherein x satisfies 0≦x≦1,wherein y satisfies 0≦y≦1,wherein x+y satisfies 0≦x+y≦1, andwherein M contains at least one of In and B; a substrate containing GaN; and a buffer layer provided between the active layer and a face of the substrate, wherein the semiconductor device is operated by electrical current flowing through the active layer in a direction parallel to the face of the substrate, wherein the buffer layer has a composition represented by the formula:
AlpIn1-pN, wherein p satisfies 0≦p<1, and wherein the buffer layer has a band gap energy wider than that of the substrate and is lattice-matched to the substrate, wherein a composition ratio of Al and a composition ratio of In in the buffer layer change in a thickness direction such that the buffer layer is lattice-matched to the substrate, and wherein the composition ratio of Al changes due to a change in the composition ratio of In and the composition ratio of In changes due to a change in the composition ratio of Al.