Resistive memory arrangement and a method of forming the same

摘要

According to embodiments of the present invention, a resistive memory arrangement is provided. The resistive memory arrangement includes a nanowire, and a resistive memory cell including a resistive layer including a resistive changing material, wherein at least a section of the resistive layer is arranged covering at least a portion of a surface of the nanowire, and a conductive layer arranged on at least a part of the resistive layer. According to further embodiments of the present invention, a method of forming a resistive memory arrangement is also provided.

主权项

1. A resistive memory arrangement comprising:
a nanowire having a longitudinal axis; and a resistive memory cell comprising: a resistive layer comprising a resistive changing material, wherein at least a section of the resistive layer is arranged covering at least a portion of a surface of the nanowire, and wherein at least a portion of the resistive layer is arranged around the longitudinal axis and at least substantially surrounding the nanowire; and a conductive layer arranged on at least a part of the resistive layer, wherein at least a portion of the conductive layer is arranged at least substantially surrounding the portion of the resistive layer; wherein the nanowire and the conductive layer act as separate electrical contacts to allow a current flow between the nanowire and the conductive layer through the resistive layer.