Light emitting diode and method of fabricating the same

摘要

Disclosed herein is a light emitting diode, the structure of the light emitting diode comprises a substrate, a first-type semiconductor layer, a structural layer, a light emitting layer, a second-type semiconductor layer, a transparent conductive layer, a first contact pad and a second contact pad in regular turn. The structural layer comprises a stacked structure having a trapezoid sidewall and nano columns extending from the trapezoid sidewall in regular arrangement. Also, a method for fabricating the light emitting diode is disclosed.

主权项

1. A light emitting diode comprising:
a substrate having a surface with a cushion layer thereon with a first area and a second area; a first-type semiconductor layer comprising a first portion and a second portion located in the first area and the second area, respectively; a structural layer disposed on the second area of the cushion layer, comprising: the second portion of the first-type semiconductor layer; a light emitting layer disposed on the second portion of the first-type semiconductor layer; and a second-type semiconductor layer disposed on the light emitting layer, wherein the structural layer is composed of a stacked structure having a trapezoid sidewall and nano columns, the trapezoid sidewall has an inclined surface, and a portion of the nano columns extends from the inclined surface in regular arrangement; a transparent conductive layer disposed on the stacked structure of the structural layer in the second area of the cushion layer; a first contact pad disposed on the first portion of the first-type semiconductor layer in the first area of the cushion layer; and a second contact pad disposed on the transparent conductive layer.