Light-emitting diode and method for preparing the same

摘要

A method for preparing a light-emitting diode having a vertical structure by stripping a GaN base epitaxial layer and a sapphire substrate by a wet process, the method including: a) preparing a graphical growth substrate; b) growing a GaN base light-emitting diode epitaxial layer on the graphical growth substrate, the GaN base light-emitting diode epitaxial layer from the bottom to the top successively including a N-type GaN layer and a P-type GaN layer; c) successively forming a transparent and electrically conductive film, an omni-directional reflection layer, an electrically conductive reflection layer, and a passive metal protection layer from the bottom to the top on the GaN base light-emitting diode epitaxial layer; and d) removing the first layer of stable material with a high melting point of the growth substrate by dry etching, exposing the N-type GaN layer, and preparing an N electrode on the N-type GaN layer.

主权项

1. A method for preparing a light-emitting diode having a vertical structure, the method comprising:
a) preparing a graphical growth substrate, the growth substrate from bottom to top successively including a sapphire substrate, a second layer of a material with a high melting point, and a first layer of stable material with a high melting point, wherein the material in the second layer corrodes in an acidic solution or an alkaline solution, the melting points of the first layer and the second layer of material with a high melting point are greater than 900° C.; b) growing a GaN base light-emitting diode epitaxial layer on the graphical growth substrate, the GaN base light-emitting diode epitaxial layer from bottom to top successively including a N-type GaN layer and a P-type GaN layer; c) successively forming a transparent and electrically conductive film, an omni-directional reflection layer, an electrically conductive reflection layer and a passive metal protection layer from bottom to top on the GaN base light-emitting diode epitaxial layer, the electrically conductive reflection layer being connected with the transparent and electrically conductive film through holes in the omni-directional reflection layer, binding a support substrate having a high thermal conductivity to the passive metal protection layer by binding technology, removing the second layer of the material with a high melting point of the growth substrate and part of the GaN base epitaxial layer and stripping the sapphire substrate by a wet process; and d) removing the first layer of stable material with a high melting point of the growth substrate by dry etching, exposing the N-type GaN layer, and preparing an N electrode on the N-type GaN layer.