| 发明名称 | Integration of dense and variable pitch fin structures | ||
| 摘要 | Semiconductor devices include a first set of fins having a uniform fin pitch that is less than half a minimum fin pitch for an associated lithography process; and a second set of fins having a variable fin pitch that is less the minimum fin pitch for the associated lithography process but greater than half the minimum fin pitch for the associated lithography process. | ||
| 申请公布号 | US9087792(B2) | 申请公布日期 | 2015.07.21 |
| 申请号 | US201314020503 | 申请日期 | 2013.09.06 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Cheng Kangguo;Colburn Matthew E.;Doris Bruce B.;Khakifirooz Ali |
| 分类号 | H01L21/70;H01L21/308;H01L27/088;H01L21/84;H01L27/108;H01L29/06;H01L27/11 | 主分类号 | H01L21/70 |
| 代理机构 | Tutunjian & Bitetto, P.C. | 代理人 | Tutunjian & Bitetto, P.C. ;Alexanian Vazken |
| 主权项 | 1. A semiconductor device, comprising: a first set of fins having a uniform fin pitch that is less than half a minimum fin pitch for a lithography process being used; and a second set of fins having a variable fin pitch that is less the minimum fin pitch for the lithography process but greater than half the minimum fin pitch for the lithography process. | ||
| 地址 | Armonk NY US | ||