Focused ion beam low kV enhancement

摘要

The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.

主权项

1. A charged particle beam system, comprising:
a source of charged particles; a charged particle beam focusing column configured to focus the charged particles into a charged particle beam, wherein components of a middle section of the charged particle beam focusing column includes a scanning electrostatic deflector configured to scan the charged particle beam across a surface of the target; and voltage module configured to reduce a spot size of the charged particle beam on the surface by applying a floating bias voltage to the components.