Nonvolatile memory device and method of programming the same

摘要

A nonvolatile memory device and a method of programming the nonvolatile semiconductor memory device are disclosed. The programming method includes applying a first voltage greater than a ground voltage to a selected word line at a first time; applying a second voltage greater than the first voltage to the selected word line at a second time that occurs after a predetermined period from the first time; applying the ground voltage to a first unselected word line directly adjacent to the selected word line at the first time; and applying a third voltage greater than the ground voltage to the first unselected word line at the second time.

主权项

1. A nonvolatile memory device, comprising:
a memory cell array including a plurality of memory cells connected to word lines, string selection lines, ground selection lines arranged side by side in a row direction, and bit lines arranged in a direction perpendicular to the word lines; and a row control circuit configured to: generate a program voltage, a first pass voltage, and a second pass voltage; control the word lines, the string selection lines, and the ground selection lines; and apply the program voltage to a selected word line a predetermined time after the first pass voltage is applied to the selected word line, and apply the second pass voltage to an unselected word line directly adjacent to the selected word line when the program voltage is applied to the selected word line, wherein a voltage level of each of the first and second pass voltages is greater than a ground voltage level, and a voltage level of the program voltage is greater than those of the first and second pass voltages.