发明名称 Light-emitting device and manufacturing method
摘要 A light-emitting device comprises a substrate, a light-emitting layer, a wire formed on the substrate and supplying electric power to the light-emitting layer; a transition metal oxide layer formed on the substrate and over the wire; a bank formed on the transition metal oxide layer defining an opening over the wire; an interception layer formed on a portion of the transition metal oxide layer that is exposed through the opening and intercepting migrating fluorine; an organic layer formed on the interception layer and doped with an alkali metal; and an electrode formed on the organic layer, electrically connected to the wire via the organic layer, the interception layer, and the transition metal oxide layer, and providing the electric power supplied by the wire to the organic layer.
申请公布号 US9089036(B2) 申请公布日期 2015.07.21
申请号 US201213671594 申请日期 2012.11.08
申请人 JOLED INC 发明人 Satoh Takuya;Nendai Kenichi
分类号 H01L33/00;H05B33/10;H01L27/32;H01L51/52 主分类号 H01L33/00
代理机构 Greenblum & Bernstein, P.L.C. 代理人 Greenblum & Bernstein, P.L.C.
主权项 1. A light-emitting device, comprising: a substrate; both a wire and a pixel electrode formed on the substrate, wherein the wire and pixel electrode are separated from each other in a plan view; a transition metal oxide layer formed on both the wire and the pixel electrode; a bank formed on the transition metal oxide layer so as to define a first opening above the pixel electrode and a second opening above the wire, a portion of the transition metal oxide layer being exposed at a bottom of the first opening, and a portion of the transition metal oxide layer being exposed at a bottom of the second opening; a light-emitting layer formed above the portion of the transition metal oxide layer that is exposed at the bottom of the first opening, and wherein the light-emitting layer is not formed above the portion of the transition metal oxide layer that is exposed at the bottom of the second opening; an interception layer formed on the portion of the transition metal oxide layer that is exposed at the bottom of the second opening, and intercepting migrating fluorine, and wherein the interception layer is not formed above the portion of the transition metal oxide layer that is exposed at the bottom of the first opening; an organic layer formed on the interception layer and the light-emitting layer, and doped with an alkali metal; and a common electrode formed on the organic layer so as to be seamless at least from an area above the interception layer to an area above the light-emitting layer, wherein the common electrode is electrically connected to the wire via the transition metal oxide layer, the interception layer, and the organic layer.
地址 Tokyo JP