Photo-patternable and developable silsesquioxane resins for use in device fabrication

摘要

A coatable resin solution capable of forming a coating when applied to the surface of a substrate that is photo-patternable and developable as a dielectric material upon exposure to ultraviolet radiation is provided. The resin solution comprises a silsequioxane-based (SSQ-based) resin, at least one initiator, and an organic solvent. The SSQ-based resin includes both a hydride component and at least one photo-curable component. The resulting coating exhibits a dielectric constant that is less than or equal to about 3.5.

主权项

1. A coatable resin solution for forming a coating on a substrate, such as a wafer or electronic device, the resin solution comprising:
a silsequioxane-based resin comprising a hydride component present in a mole fraction between 0.40 to 0.90 and at least one photo-curable component up to a mole fraction of 0.40 for the photo-curable component, the hydride component characterized by units of —(HSiO3/2)—; the photo-curable component characterized by units of —(R1SiO3/2)—, where R1 is an organic photocurable group; at least one initiator selected as one from the group of a free-radical initiator, a cationic initiator, and a combination or mixture thereof; and an organic solvent; wherein the resin solution is capable of forming a coating when applied to the surface of a substrate that is photo-patternable and developable as a dielectric material upon exposure to ultraviolet radiation; wherein the silsesquioxane-based resin does not further comprise an organo-siloxane component characterized by units of —(R2SiO3/2)—, where R2 is an organic group.