Thermally enhanced interconnect substrate with embedded semiconductor device and built-in stopper and method of making the same

摘要

The present invention relates to a thermally enhanced interconnect substrate and a method of making the same. In accordance with one preferred embodiment, the method includes: forming a stopper on a metal layer of a laminate substrate; removing a selected portion of the metal layer to form a paddle layer; mounting a semiconductor device on the paddle layer using the stopper as a placement guide for the semiconductor device; attaching a stiffener to the laminate substrate; forming first and second build-up circuitries that cover the semiconductor device, the paddle layer and the stiffener at both sides; and providing a plated through-hole that provides an electrical connection between the first and second build-up circuitries. Accordingly, the paddle layer can provide excellent heat spreading, and the stopper can accurately confine the placement location of the semiconductor device and avoid the electrical connection failure between the semiconductor device and the build-up circuitry.

主权项

1. A thermally enhanced interconnect substrate with an embedded device and a built-in stopper, comprising:
a paddle layer; a semiconductor device that is mounted on the paddle layer from a first vertical direction and includes an active surface with a contact pad thereon and an inactive surface, wherein the active surface faces the first vertical direction and the inactive surface faces a second vertical direction opposite the first vertical direction and is attached to the paddle layer; an adhesive that contacts and is sandwiched between the semiconductor device and the paddle layer; the stopper that extends from the paddle layer in the first vertical direction and serves as a placement guide for the semiconductor device and is in close proximity to and laterally aligned with and laterally extends beyond peripheral edges of the semiconductor device in lateral directions orthogonal to the vertical directions; a stiffener that includes an aperture with the semiconductor device and the stopper extending thereinto; a first build-up circuitry that covers the stopper, the semiconductor device and the stiffener in the first vertical direction and includes a first insulating layer, a first via opening and a first conductive trace, wherein the first via opening in the first insulating layer is aligned with the contact pad of the semiconductor device, and the first conductive trace extends from the first insulating layer in the first vertical direction and extends through the first via opening in the second vertical direction and directly contacts the contact pad; a second build-up circuitry that covers the paddle layer and the stiffener in the second vertical direction and includes a second insulating layer, a second via opening and a second conductive trace, wherein the second via opening in the second insulating layer is aligned with the paddle layer, and the second conductive trace extends from the second insulating layer in the second vertical direction and extends through the second via opening in the first vertical direction; and a plated through-hole that extends through the stiffener in the vertical directions to provide an electrical connection between the first build-up circuitry and the second build-up circuitry.