Semiconductor device and fabricating method thereof

摘要

A semiconductor device includes a lower conductor having a lower conductor sidewall, a barrier film having a barrier film sidewall formed directly on the lower conductor sidewall, and a via formed on a top surface of the lower conductor. A top portion of the barrier film sidewall is recessed, such that a top surface of the barrier film sidewall is at a level lower than the top surface of the lower conductor.

主权项

1. A semiconductor device comprising:
a lower conductor having a lower conductor sidewall surface, and a top surface contiguous with the lower conductor sidewall surface, the top surface including an edge portion and a central portion; a barrier film having a barrier film sidewall disposed directly on the lower conductor sidewall surface; and a via disposed on the top surface of the lower conductor, wherein the lower conductor sidewall surface and the edge portion of the top surface of the lower conductor meet at a point, a top surface of the barrier film sidewall intersects the lower conductor at the point at which the lower conductor sidewall surface and the edge portion of the top surface of the lower conductor meet, the edge portion of the top surface of the lower conductor extends in an upward direction directly from the point at which the lower conductor sidewall surface and the edge portion of the top surface of the lower conductor meet, and the top surface of the barrier film sidewall is disposed at a level lower than that of the central portion of the top surface of the lower conductor.