| 发明名称 | Semiconductor structures with metal lines | ||
| 摘要 | Disclosed are semiconductor structures with metal lines and methods of manufacture which reduce or eliminate extrusion formation. The method includes forming a metal wiring comprising a layered structure of metal materials with an upper constraining layer. The method further includes forming a film on the metal wiring which prevents metal extrusion during an annealing process. | ||
| 申请公布号 | US9087839(B2) | 申请公布日期 | 2015.07.21 |
| 申请号 | US201313853301 | 申请日期 | 2013.03.29 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Adderly Shawn A.;Delibac Daniel A.;He Zhong-Xiang;Moon Matthew D.;Speranza Anthony C.;Sullivan Timothy D.;Thomas David C.;White Eric J. |
| 分类号 | H01L21/20;H01L23/522;H01L49/02;H01L23/532 | 主分类号 | H01L21/20 |
| 代理机构 | Roberts Mlotkowski Safran & Cole, P.C. | 代理人 | Cain David;Roberts Mlotkowski Safran & Cole, P.C. |
| 主权项 | 1. A method, comprising: forming a plurality of metal wirings each comprising a layered structure of metal materials with an upper constraining layer; and forming a film on the metal wirings, the film being structured to discretely cover each of the metal wirings; and after the forming of the film, annealing the metal wirings and the film, wherein the film is structured to prevent metal extrusion from the metal wirings which it discretely covers during the annealing. | ||
| 地址 | Armonk NY US | ||