| 发明名称 | Power semiconductor devices | ||
| 摘要 | A power semiconductor device may comprise: a lower structure; a solder layer on the lower structure; a semiconductor structure on the solder layer; a contact layer on the semiconductor structure; a pad layer on the contact layer; and/or a wire between the pad layer and the lower structure. The solder layer may be electrically connected to a first electrode of the semiconductor structure. | ||
| 申请公布号 | US9087833(B2) | 申请公布日期 | 2015.07.21 |
| 申请号 | US201314093126 | 申请日期 | 2013.11.29 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Lee Baik-woo;Booh Seong-woon |
| 分类号 | H01L29/45;H01L29/78;H01L29/739;H01L23/498;H01L23/373;H01L23/00;H01L25/07;H01L25/18;H01L29/20 | 主分类号 | H01L29/45 |
| 代理机构 | Harness, Dickey & Pierce, PLC | 代理人 | Harness, Dickey & Pierce, PLC |
| 主权项 | 1. A power semiconductor device, comprising: a lower structure; a solder layer on the lower structure; a semiconductor structure on the solder layer; a contact layer on the semiconductor structure; a pad layer on the contact layer; a wire between the pad layer and the lower structure; and a trench in a boundary region between the pad layer and the contact layer; wherein the solder layer is electrically connected to a first electrode of the semiconductor structure. | ||
| 地址 | KR | ||