| 发明名称 | Nitride based heterojunction semiconductor device and manufacturing method thereof | ||
| 摘要 | A nitride based heterojunction semiconductor device includes a gallium nitride (GaN) layer disposed on a substrate, an aluminum (Al)-doped GaN layer disposed on the GaN layer, a Schottky electrode disposed in a first area on the Al-doped GaN layer, an AlGaN layer disposed in a second area on the Al-doped GaN layer, and an ohmic electrode disposed on the AlGaN layer. The first area is different from the second area. | ||
| 申请公布号 | US9087768(B2) | 申请公布日期 | 2015.07.21 |
| 申请号 | US201313759923 | 申请日期 | 2013.02.05 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Lee Jae Hoon;Jeong Jae Hyun |
| 分类号 | H01L29/66;H01L29/205;H01L29/872;H01L29/201;H01L29/20 | 主分类号 | H01L29/66 |
| 代理机构 | McDermott Will & Emery LLP | 代理人 | McDermott Will & Emery LLP |
| 主权项 | 1. A nitride based heterojunction semiconductor device, comprising: a gallium nitride (GaN) layer disposed on a substrate; an aluminum (Al)-doped GaN layer disposed on the GaN layer; a Schottky electrode disposed in a first area on the Al-doped GaN layer, and in direct physical contact with the Al-doped GaN layer; an AlGaN layer formed in a second area on the Al-doped GaN layer, the second area being different from the first area; and an ohmic electrode disposed on the AlGaN layer. | ||
| 地址 | Suwon-si, Gyeonggi-do KR | ||