| 发明名称 | Method for manufacturing semiconductor device | ||
| 摘要 | A method for manufacturing a semiconductor device is provided. The method includes forming a wiring pattern made of copper, annealing the wiring pattern in an atmosphere of inert gas, and performing plasma processing on the wiring pattern using a reducing gas after the annealing. A temperature in the plasma processing is equal to or below a temperature in the annealing. | ||
| 申请公布号 | US9087762(B2) | 申请公布日期 | 2015.07.21 |
| 申请号 | US201414554311 | 申请日期 | 2014.11.26 |
| 申请人 | Canon Kabushiki Kaisha | 发明人 | Kawano Akihiro;Sano Hiroaki |
| 分类号 | H01L21/00;H01L27/146 | 主分类号 | H01L21/00 |
| 代理机构 | Fitzpatrick, Cella, Harper & Scinto | 代理人 | Fitzpatrick, Cella, Harper & Scinto |
| 主权项 | 1. A method for manufacturing a semiconductor device, the method comprising: forming a wiring pattern made of copper; annealing the wiring pattern in an atmosphere of inert gas; and performing plasma processing on the wiring pattern using a reducing gas after the annealing, wherein a temperature in the plasma processing is equal to or below a temperature in the annealing, andwherein the forming of the wiring pattern comprises: forming an electrically conductive film using copper as a material on a first insulating film having an opening and in the opening; andpolishing the conductive film to remove a portion of the conductive film located on the first insulating film,wherein a portion of the conductive film embedded in the opening of the first insulating film becomes the wiring pattern. | ||
| 地址 | Tokyo JP | ||