Active matrix substrate, and display panel

摘要

An active matrix substrate (20a) includes a gate electrode (25) formed on an insulating substrate (10a), and a planarizing film (26) formed on the gate electrode (25) and made of a baked SOG material. The gate electrode (25) is a multilayer film including a first conductive film (27) formed on the insulating substrate (10a) and made of a metal except copper, a second conductive film (28) formed on the first conductive film (27) and made of copper, and a third conductive film (29) formed on the second conductive film (28) and made of the metal except copper.

主权项

1. An active matrix substrate, comprising:
an insulating substrate; a gate electrode formed on the insulating substrate; a planarizing film formed on the gate electrode, and made of a baked SOG material; a gate insulating layer covering the gate electrode and the planarizing film; a semiconductor layer formed on the gate insulating layer, and having a channel region overlapping the gate electrode; source and drain electrodes formed on the semiconductor layer to overlap the gate electrode and face each other with the channel region sandwiched therebetween; a protection layer covering the semiconductor layer, the source and drain electrodes; and a pixel electrode formed on the protection layer, wherein the gate electrode is a multilayer film including a first conductive film formed on the insulating substrate and made of a metal except copper, a second conductive film formed on the first conductive film and made of copper, and a third conductive film formed on the second conductive film and made of the metal except copper; and an interlayer insulating layer is formed on the protection layer, and the pixel electrode is formed on the interlayer insulating layer.