Semiconductor devices and methods of manufacturing the semiconductor device

摘要

According to example embodiments, a semiconductor device may include a high electron mobility transistor (HEMT) on a first region of a substrate, and a diode on a second region of the substrate. The HEMT may be electrically connected to the diode. The HEMT and the diode may be formed on an upper surface of the substrate such as to be spaced apart from each other in a horizontal direction. The HEMT may include a semiconductor layer. The diode may be formed on another portion of the substrate on which the semiconductor layer is not formed. The HEMT and the diode may be cascode-connected to each other.

主权项

1. A semiconductor device comprising:
a substrate; a high electron mobility transistor (HEMT) on a first region of the substrate,
the HEMT including a semiconductor layer; and a diode on a second region of the substrate, the diode being electrically connected to the HEMT,
the diode including an anode contacting the substrate and a cathode that is spaced apart from the anode in a horizontal direction,the anode being spaced apart from the semiconductor layer, andthe cathode being between the anode and the semiconductor layer.