Method for manufacturing graphene nano-ribbon, mosfet and method for manufacturing the same

摘要

A MOSFET with a graphene nano-ribbon, and a method for manufacturing the same are provided. The MOSFET comprises an insulating substrate; and an oxide protection layer on the insulating substrate. At least one graphene nano-ribbon is embedded in the oxide protection layer and has a surface which is exposed at a side surface of the oxide protection layer. A channel region is provided in each of the at least one graphene nano-ribbon. A source region and a drain regions are provided in each of the at least one graphene nano-ribbon. The channel region is located between the source region and the drain region. A gate dielectric is positioned on the at least one graphene nano-ribbon. A gate conductor on the gate dielectric. A source and drain contacts contact the source region and the drain region respectively on the side surface of the oxide protection layer.

主权项

1. A MOSFET, comprising
an insulating substrate; a protection layer on the insulating substrate; at least one graphene nano-ribbon having its body embedded inside the protection layer but a side surface exposed by the protection layer at a corresponding side surface of the protection layer; a gate stack disposed on the side surface of the protection layer and thus intersecting with the exposed side surface of the at least one graphene nano-ribbon, including a gate dielectric and a gate conductor stacked in sequence, wherein the gate stack defines a channel region in each of the at least one graphene nano-ribbon; a source region and a drain region in each of the at least one graphene nano-ribbon, the channel region being located between the source region and the drain region; and a source contact and a drain contact which contact the source region and the drain region respectively on the side surface of the protection layer.