发明名称 Substrate with conductive film, substrate with multilayer reflective film and reflective mask blank for EUV lithography
摘要 To provide a substrate with a conductive film for an EUV mask blank, which has a conductive film having a low sheet resistance, excellent surface smoothness and excellent contact to an electrostatic chuck, and with which deformation of the substrate by the film stress in an EUV mask blank can be suppressed.;A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, comprising a conductive film formed on a substrate; wherein the conductive film has at least two layers of a layer (lower layer) formed on the substrate side and a layer (upper layer) formed on the lower layer; andthe lower layer of the conductive film contains chromium (Cr), oxygen (O) and hydrogen (H), and the upper layer of the conductive film contains chromium (Cr), nitrogen (N) and hydrogen (H).
申请公布号 US9086629(B2) 申请公布日期 2015.07.21
申请号 US201313956898 申请日期 2013.08.01
申请人 Asahi Glass Company, Limited 发明人 Maeshige Kazunobu;Hayashi Kazuyuki;Uno Toshiyuki
分类号 G03F1/24;G03F1/22 主分类号 G03F1/24
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, comprising a conductive film formed on a substrate; wherein the conductive film has at least two layers of a layer (lower layer) formed on the substrate side and a layer (upper layer) formed on the lower layer; and the lower layer of the conductive film contains chromium (Cr), oxygen (O) and hydrogen (H), and the upper layer of the conductive film contains chromium (Cr), nitrogen (N) and hydrogen (H).
地址 Chiyoda-ku JP