| 发明名称 | Semiconductor memory device | ||
| 摘要 | According to one embodiment, a semiconductor memory device includes a plurality of first interconnects extending in a first direction, a plurality of second interconnects extending in a second direction crossing the first direction, and a memory element provided between the first interconnect and the second interconnect at a portion where the first interconnect crosses the second interconnect. The memory element includes a variable resistance film and a stress generating film stacked with the variable resistance film to apply stress to the variable resistance film in a surface direction. | ||
| 申请公布号 | US9087770(B2) | 申请公布日期 | 2015.07.21 |
| 申请号 | US201314022613 | 申请日期 | 2013.09.10 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Matsuo Kouji |
| 分类号 | H01L47/00;H01L27/24 | 主分类号 | H01L47/00 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A semiconductor memory device, comprising: a plurality of first interconnects extending in a first direction; a plurality of second interconnects extending in a second direction crossing the first direction; and a memory element provided between the first interconnect and the second interconnect at a portion where the first interconnect crosses the second interconnect, the memory element including: a variable resistance film; anda stress generating film stacked with the variable resistance film to apply stress to the variable resistance film in a surface direction. | ||
| 地址 | Minato-ku JP | ||