| 发明名称 | Silicon-based negative active material, preparing method of preparing same and rechargeable lithium battery including same | ||
| 摘要 | A silicon-based negative active material that includes a core including silicon oxide represented by SiOx (0<x<2); and a coating layer including metal oxide, and the metal of the metal oxide includes aluminum (Al), titanium (Ti), cobalt (Co), magnesium (Mg), calcium (Ca), potassium (K), sodium (Na), boron (B), strontium (Sr), barium (Ba), manganese (Mn), nickel (Ni), vanadium (V), iron (Fe), copper (Cu), phosphorus (P), scandium (Sc), zirconium (Zr), niobium (Nb), chromium (Cr), and/or molybdenum (Mo), the core has a concentration gradient where an atom % concentration of a silicon (Si) element decreases to the center of the core, and an atom % concentration of an oxygen (O) element increases to the center, and a depth from the surface contacting the coating layer where a concentration of the silicon (Si) element is about 55 atom % corresponds to about 2% to about 20% of a diameter of the core. | ||
| 申请公布号 | US9088045(B2) | 申请公布日期 | 2015.07.21 |
| 申请号 | US201313802628 | 申请日期 | 2013.03.13 |
| 申请人 | Samsung SDI Co., Ltd. | 发明人 | Park Sang-Eun;Kim Young-Ugk;Kim Young-Hwan;Lee Sang-Min;Hwang Duck-Chul;Lee Young-Jun;Kim Young-Min;Kim Tae-Geun;Na Seung-Ho;Heo Ung-Kuk;Lee Deuk-Hwa |
| 分类号 | H01M4/485;H01M4/36;H01M4/04;H01M4/131;H01M4/1391;H01M4/62 | 主分类号 | H01M4/485 |
| 代理机构 | Christie, Parker & Hale, LLP | 代理人 | Christie, Parker & Hale, LLP |
| 主权项 | 1. A silicon-based negative active material, comprising: a core comprising silicon oxide represented by SiOx (0<x<2); and a coating layer comprising metal oxide, wherein: the metal of the metal oxide comprises at least one selected from aluminum (Al), titanium (Ti), cobalt (Co), magnesium (Mg), calcium (Ca), potassium (K), sodium (Na), boron (B), strontium (Sr), barium (Ba), manganese (Mn), nickel (Ni), vanadium (V), iron (Fe), copper (Cu), phosphorus (P), scandium (Sc), zirconium (Zr), niobium (Nb), chromium (Cr), and molybdenum (Mo), the core has a concentration gradient where an atom % concentration of a silicon (Si) element decreases according to increase of a depth from a surface contacting the coating layer to the center of the core, and an atom % concentration of an oxygen (O) element increases according to increase of the depth from the surface contacting the coating layer to the center of the core, and the depth from the surface contacting the coating layer where a concentration of the silicon (Si) element is about 55 atom % corresponds to about 2% to about 20% of a diameter of the core. | ||
| 地址 | Yongin-si KR | ||