发明名称 Fullerene-doped nanostructures and methods therefor
摘要 Nanostructures are doped to set conductivity characteristics. In accordance with various example embodiments, nanostructures such as carbon nanotubes are doped with a halogenated fullerene type of dopant material. In some implementations, the dopant material is deposited from solution or by vapor deposition, and used to dope the nanotubes to increase the thermal and/or electrical conductivity of the nanotubes.
申请公布号 US9087995(B2) 申请公布日期 2015.07.21
申请号 US201314021796 申请日期 2013.09.09
申请人 The Board of Trustees of the Leland Stanford Junior University 发明人 Virkar Ajay;LeMieux Melburne C.;Bao Zhenan
分类号 H01L51/40;H01L51/00;C01B31/02;B82Y30/00;B82Y40/00 主分类号 H01L51/40
代理机构 Crawford Maunu PLLC 代理人 Crawford Maunu PLLC
主权项 1. An apparatus comprising: a semiconducting carbon nanotube-based nanomaterial coupled between circuit nodes; and a conductive hybrid material including a halogenated fullerene dopant and the carbon nanotube-based nanomaterial, the dopant configured to effect a charge transfer to the carbon nanotube-based nanomaterial, and configured to electrically couple the circuit nodes, the hybrid material exhibiting a conductivity that is higher than a conductivity of the carbon nanotube-based nanomaterial and transparency over 90%.
地址 Palo Alto CA US