| 发明名称 | Systems and methods for non-periodic pulse partial melt film processing | ||
| 摘要 | In one aspect, the present disclosure relates to a method of processing a thin film including, while advancing a thin film in a first selected direction, irradiating a first region of the thin film with a first laser pulse and a second laser pulse, each laser pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the first region re-solidifying and crystallizing to form a first crystallized region, and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, each pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the second region re-solidifying and crystallizing to form a second crystallized region, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse. | ||
| 申请公布号 | US9087696(B2) | 申请公布日期 | 2015.07.21 |
| 申请号 | US201013505961 | 申请日期 | 2010.11.02 |
| 申请人 | THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK | 发明人 | Im James S.;Deng Yikang;Hu Qiongying;Chung Ui-Jin;Limanov Alexander B. |
| 分类号 | H01L21/20;H01L21/02;H01L29/04;H01L21/67;H01L29/786;B23K26/00;H01L21/268;H01L27/12 | 主分类号 | H01L21/20 |
| 代理机构 | Hale and Dorr LLP | 代理人 | Pickering Wilmer Cutler;Hale and Dorr LLP |
| 主权项 | 1. A method of processing a thin film comprising:while advancing a thin film in a first selected direction, irradiating a first region of the thin film with a first laser pulse and a second laser pulse, each laser pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the first region re-solidifying and crystallizing to form a first crystallized region; and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, each pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the second region re-solidifying and crystallizing to form a second crystallized region, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse. | ||
| 地址 | New York NY US | ||