| 发明名称 |
Hafnium-containing and zirconium-containing precursors for vapor deposition |
| 摘要 |
Disclosed are hafnium-containing and zirconium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit hafnium, zirconium, hafnium oxide, and zirconium oxide containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. |
| 申请公布号 |
US9087690(B2) |
申请公布日期 |
2015.07.21 |
| 申请号 |
US201114009812 |
申请日期 |
2011.04.06 |
| 申请人 |
American Air Liquide, Inc. |
发明人 |
Pallem Venkateswara R.;Dussarrat Christian |
| 分类号 |
H01L21/02;C07F7/00;C23C16/40 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
McQueeney Patricia E. |
| 主权项 |
1. A molecule having the following formula:
M(R1—N—C(R3)—N—R2)u(OR4)x(NR5R6)y(O2CR7)z Formula I or M(R1—N—(C(R3)2)m—N—R2)v(OR4)x(NR5R6)y(O2CR7)z Formula IIwherein:
M is Hf or Zr; R1, R2, R5, R6, and R7 are independently selected from the group consisting of H and C1-C6 alkyl group; R3═H, C1-C6 alkyl group, or NMe2; R4 is a C1-C6 alkyl group; m=2-4; u=0-2; V=0; X=1-3; y=0-2; z=0-1; in Formula I, u+x+y+z=4; in Formula II, 2v+x+y+z=4; and u, v, or z≧1. |
| 地址 |
Fremont CA US |
