发明名称 |
Volatile memory device capable of relieving disturbances of adjacent memory cells and refresh method thereof |
摘要 |
Provided is a refresh method of a volatile memory device. The method includes: detecting a number of disturbances that affect a second memory area as the number of accesses to a first memory area is increased; outputting an alert signal from the volatile memory device to an outside of the volatile memory device when the detected number of disturbances reach a reference value; and performing a refresh operation on the second memory area in response to the alert signal. |
申请公布号 |
US9087602(B2) |
申请公布日期 |
2015.07.21 |
申请号 |
US201414219374 |
申请日期 |
2014.03.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Youn Jae-Youn;Kim Su-A;Park Chul-Woo;Sohn Young-Soo |
分类号 |
G11C7/20;G11C11/406 |
主分类号 |
G11C7/20 |
代理机构 |
Muir Patent Law, PLLC |
代理人 |
Muir Patent Law, PLLC |
主权项 |
1. A refresh method of a volatile memory device, the method comprising:
detecting a number of disturbances that affect a second memory area as the number of accesses to a first memory area is increased; outputting an alert signal from the volatile memory device to an outside of the volatile memory device when the detected number of disturbances reaches a reference value; and performing a refresh operation on the second memory area in response to the alert signal. |
地址 |
Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do KR |