发明名称 Volatile memory device capable of relieving disturbances of adjacent memory cells and refresh method thereof
摘要 Provided is a refresh method of a volatile memory device. The method includes: detecting a number of disturbances that affect a second memory area as the number of accesses to a first memory area is increased; outputting an alert signal from the volatile memory device to an outside of the volatile memory device when the detected number of disturbances reach a reference value; and performing a refresh operation on the second memory area in response to the alert signal.
申请公布号 US9087602(B2) 申请公布日期 2015.07.21
申请号 US201414219374 申请日期 2014.03.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Youn Jae-Youn;Kim Su-A;Park Chul-Woo;Sohn Young-Soo
分类号 G11C7/20;G11C11/406 主分类号 G11C7/20
代理机构 Muir Patent Law, PLLC 代理人 Muir Patent Law, PLLC
主权项 1. A refresh method of a volatile memory device, the method comprising: detecting a number of disturbances that affect a second memory area as the number of accesses to a first memory area is increased; outputting an alert signal from the volatile memory device to an outside of the volatile memory device when the detected number of disturbances reaches a reference value; and performing a refresh operation on the second memory area in response to the alert signal.
地址 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do KR