发明名称 FORMATION OF MASK FOR DIAMOND FILMS ETCHING
摘要 FIELD: chemistry.SUBSTANCE: mask from a dielectric or metal is produced before the growth of a diamond film on a substrate with a flat surface, which ensures the submicron size of the mask, with the following formation on the mask of the diamond film and opening of a window from the side of the substrate, which ensures access from the side of the substrate to reagents for etching the diamond film through the mask.EFFECT: formation of the submicron mask for etching the diamond film before the growth of diamond film.6 dwg, 1 tbl
申请公布号 RU2557360(C2) 申请公布日期 2015.07.20
申请号 RU20120155338 申请日期 2012.12.20
申请人 OBSHCHESTVO S OGRANICHENNOJ OTVETSTVENNOST'JU "SIEHN EHL DEVAJSEZ" 发明人 IL'ICHEV EHDUARD ANATOL'EVICH;KULESHOV ALEKSANDR EVGEN'EVICH;MATVEEVA NADEZHDA KONSTANTINOVNA;NABIEV RINAT MUKHAMEDOVICH;PETRUKHIN GEORGIJ NIKOLAEVICH;RYCHKOV GENNADIJ SERGEEVICH
分类号 H01L21/467 主分类号 H01L21/467
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