GROWTH OF HIGH-QUALITY SINGLE LAYER GRAPHENE USING CU/NI MULTI-CATALYST AND GRAPHENE DEVICE USING THE METHOD

摘要

The present invention relates to a method for growing high-quality single layer graphene using a Cu/Ni multi-layered metal catalyst, and to a graphene device using the same. According to the method, when graphene is grown in a CVD method, the Cu/Ni multi-layered metal catalyst, which has a fixed thickness of a lower nickel layer and a varied thickness of an upper copper layer, is used to grow the high-quality single layer graphene under the control. According to the method, the high-quality single layer graphene can be obtained; performance of a graphene application device is increased by using the same graphene; and the graphene can significantly contribute to industrialization.