| 摘要 |
FIELD: electricity.SUBSTANCE: semiconductor gas sensor contains the housing 1 of the reactionary chamber 2 made of stainless steel. The housing 1 from the end face is enclosed by the mesh 3 from wire with the diameter 0.03?0.05 mm with the mesh width 0.05?0.07 mm from stainless steel. The spherical semiconductor gas-sensitive element 5 by means of wires of the heater 6 and the measuring conductor 7 is installed in the housing 1 at the centre of the reactionary chamber 2 on the contact conductors 4. Inside the semiconductor gas-sensitive element 5 the heater 6 is located which is designed as a cylindrical spring inside which along its axis and along the diameter of the spherical semiconductor element 5 the direct measuring conductor 7 is placed. The heater 6 and the measuring conductor 7 of the gas-sensitive elements are made from platinum wire with the diameter 0.015?0.03 mm. The heater is implemented by 2?8 rounds of this wire with the diameter of rounds 0.3?0.6 mm. The space around the direct measuring conductor 7 and inside the cylindrical spring of the heater 6 is filled with gas-sensitive compound of SnOaround which (and around the heater 6) the spherical porous and gas-sensitive layer 5 of InOis provisioned; the external diameter of which is 0.8?0.9 of mm.EFFECT: improvement of sensitivity, improvement of mechanical strength, long-term stability, response time and resistance to external factors.8 dwg, 4 tbl |
