| 摘要 |
The purpose of the present invention is to increase controllability of a composition ratio or film properties when forming a thin film. A method for manufacturing a semiconductor device performs a cycle including a process of forming a first film including at least a small amount of elements, boron, and nitrogen, and a process of forming a second film including at least boron and nitrogen, wherein a containing ratio of boron to nitrogen in the first film is different from that in the second film, and then forms a laminate film in which the first film and the second film are arranged in layers on a substrate. |
