| 摘要 |
<p>Disclosed are a graphene photodetector and a manufacturing method thereof. The present invention forms a passivation layer on graphene via atomic layer deposition to suppress chemical reaction occurring on the surface of the graphene, so the present invention maintains on/off state discrimination of a stable optical response without changes of reference current even during the incidence of light. Additionally, the present invention is stably operated even in a short wavelength field with large energy so it can be used in various wavelength bands regardless of wavelength. Additionally, the present invention, if forming the pervasion layer, suppresses oxidation/reduction reactions on the surface of the graphene, so it can enhance mobility of an electron.</p> |
