PROCEDE DE TRAITEMENT DE L'ETAT DE SURFACE D'UN SUBSTRAT DE SILICIUM

摘要

The method involves contacting a silicon substrate with a first solution comprising hydrofluoric acid diluted in water at a temperature below 40 degree Celsius. A silicon layer is contacted with a second solution comprising ammonia and hydrogen peroxide diluted in water so as to obtain less than 0.100 nanometer roughness over an area at an end of treatment cycles. The successive treatment cycles are repeated until obtaining a roughness lower than 0.100 nanometer on the area.