| 摘要 |
<p>A detector for detecting visible and NIR electromagnetic radiation is disclosed. The aforesaid detector comprises: (a) a substrate made of conventional temperature grown semi insulating gallium arsenide (GaAs); (b) an active layer; and (c) means for applying electric fields to the active layer. The active layer is made of lowtemperature grown semi insulating GaAs or made of ion implanted conventional temperature grown semi insulating GaAs. Also disclosed an imager based on monolithically integrated array of detectors and read out integrated circuit (ROIC).</p> |
