METHODS OF FABRICATING PATTERNS OF SEMICONDUCTOR DEVICES USING SELF-ALIGNED DOUBLE PATTERNING PROCESSES

摘要

The present invention relates to a method to form a pattern of a semiconductor device using a self-aligned double patterning process, comprising: preparing an initial layout having a first and a second design pattern, and a third design pattern arranged between the first and the second design pattern; extracting a first sub layout including the first design pattern and a second sub layout including the second design pattern from the initial layout; forming a first transformed sub layout including a first transformed design pattern by transforming the first design pattern of the first sub layout; forming a transformed layout including the first transformed sub layout and the second sub layout; and performing a double patterning using the transformed layout.