SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

An embodiment of a compound semiconductor device includes: a first lower electrode; a first insulating film over the first lower electrode; a first upper electrode over the first insulating film; a second lower electrode separate from the first lower electrode; a second insulating film over the second lower electrode; a third insulating film over the second insulating film; and a second upper electrode over on the third insulating film. A thickness of the first insulating film is substantially the same as a thickness of the third insulating film, a contour of the third insulating film in planar view is outside a contour of the second insulating film in planar view, and a contour of the second upper electrode in planar view is inside the contour of the second insulating film in planar view.

主权项

1. A semiconductor device, comprising:
a first lower electrode; a first insulating film over the first lower electrode; a first upper electrode over the first insulating film; a second lower electrode separate from the first lower electrode; a second insulating film over the second lower electrode; a third insulating film over the second insulating film; and a second upper electrode over on the third insulating film, wherein: a thickness of the first insulating film is substantially the same as a thickness of the third insulating film; a contour of the third insulating film in planar view is outside a contour of the second insulating film in planar view; and a contour of the second upper electrode in planar view is inside the contour of the second insulating film in planar view.