| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element suitable for high power.SOLUTION: A semiconductor laser diode 70 includes a substrate 1, and a semiconductor lamination structure 2 formed on the substrate 1 by crystal growth. The semiconductor lamination structure 2 includes an n-type (AlGa)InP clad layer 14 and a p-type (AlGa)InP clad layer 17, an n-side AlGaAs guide layer 15 and a p-side AlGaAs guide layer 16 sandwiched by these clad layers 14 and 17, and an active layer 10 sandwiched by these guide layers 15 and 16. The active layer 10 is configured by laminating a quantum well layer 221 consisting of an AlGaAsPlayer, and a barrier layer 222 consisting of an AlGaAs layer alternately and repeatedly a plurality of times. |
