| 摘要 |
PROBLEM TO BE SOLVED: To provide a photovoltaic device manufacturing method which achieves good electrical connection between an impurity diffusion layer having a low impurity concentration and a paste electrode, and has excellent photoelectric conversion efficiency.SOLUTION: A manufacturing method of a photovoltaic device including an impurity diffusion layer provided on a surface layer on one surface side of a semiconductor substrate, an insulation film formed on the impurity diffusion layer and a paste electrode which is provided on the one surface side of the semiconductor substrate and pierces the insulation film to be connected with the impurity diffusion layer comprises: a step S60 of printing on the insulation film, an electrode material paste containing a metal component and a glass component; a step S70 of forming a paste electrode by burning the electrode material paste; and a step S80 of supplying an etchant which has a nature to dissolve the glass component and the metal component to one surface side of a semiconductor substrate on which a paste electrode is formed to perform etching. A concentration of the etchant is within a range from 0.1 mass% to 1.0 mass% and a processing time of the etching is within a range from 5 seconds to 60 seconds. |
