| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique advantageous in simplifying steps for forming a mask for ion implantation.SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: forming a resist film having a thickness of 7 micrometers or more, on a semiconductor substrate on which an effective region 200 including a pixel array region 100 and a peripheral region 200, and a non-effective region 300 disposed adjacent to the effective region are defined; forming a first opening OP1 arranged on the effective region, a second opening OP2 arranged at least partially between the first opening OP1 and a third opening OP3, and a pattern having the third opening OP3 arranged on the non-effective region by performing photo-lithography process to the resist film; and performing ion implantation to the pixel array region through the openings OP1, OP2 and OP3. In a shape of a cross section parallel to a surface of the semiconductor substrate, a minimum curvature radius of the second opening OP2 is larger than that of the third opening OP3. |
