| 发明名称 |
SEMICONDUCTOR DEVICE, METHOD FOR FORMING CONTACT AND METHOD FOR ETCHING CONTINUOUS RECESS |
| 摘要 |
A method for forming a contact is provided. The method includes: forming a first dielectric layer over a substrate; forming a second dielectric layer over the first dielectric layer; patterning the second dielectric layer to form a first recess; patterning the first dielectric layer by a first etchant through the first recess to form a second recess, wherein the first etchant has a higher etching rate with respect to the first dielectric layer than with respect to the second dielectric layer and further wherein the second recess is aligned with the first recess; and forming a continuous contact plug in the first recess and the second recess. |
| 申请公布号 |
US2015200136(A1) |
申请公布日期 |
2015.07.16 |
| 申请号 |
US201414152115 |
申请日期 |
2014.01.10 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
CHEN YUN-HUA;HUANG YI-CHUN |
| 分类号 |
H01L21/768;H01L23/48;H01L21/311 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a contact, comprising:
forming a first dielectric layer over a substrate; forming a second dielectric layer over the first dielectric layer; patterning the second dielectric layer to form a first recess; patterning the first dielectric layer by a first etchant through the first recess to form a second recess, wherein the first etchant has a higher etching rate with respect to the first dielectric layer than with respect to the second dielectric layer and further wherein the second recess is aligned with the first recess; and forming a continuous contact plug in the first recess and the second recess. |
| 地址 |
Hsinchu TW |
