METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

The performances of semiconductor elements disposed in a multilayer wiring layer are improved. A semiconductor device includes: a first wire disposed in a first wiring layer; a second wire disposed in a second wiring layer stacked over the first wiring layer; a gate electrode arranged between the first wire and the second wire in the direction of stacking of the first wiring layer and the second wiring layer, and not coupled with the first wire and the second wire; a gate insulation film disposed over the side surface of the gate electrode; and a semiconductor layer disposed over the side surface of the gate electrode via the gate insulation film, and coupled with the first wire and the second wire.

主权项

1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first wiring layer having a first wire over a semiconductor substrate, forming a gate electrode not coupled with the first wire over the first wiring layer, forming a gate insulation film over the side surface of the gate electrode, forming a semiconductor layer coupled with the first wire via the gate insulation film, over the side surface of the gate electrode, and forming a second wiring layer having a second wire not coupled with the gate electrode, and coupled with the semiconductor layer, over the first wiring layer.