MEMORY DEVICE FOR RESISTANCE SWITCHING USING MATERIAL HAVING A BROWNMILLERITE STRUCTURE

摘要

A resistive switching memory device using a material of a brownmillerite structure according to the present invention includes a first electrode which is composed of an oxide electrode, a resistive switching unit which is formed on the first electrode and is composed of an oxide thin film with the brownmillerite structure, and a second electrode which is formed on a resistive change layer. And, the resistive switching unit is formed by successively stacking an octahedral structure layer and a tetrahedral structure layer.