| 摘要 |
<p>A method for manufacturing a semiconductor device is simply and easily performed. In the method for manufacturing the semiconductor device, a liner film (LF1) is formed on an interlayer dielectric layer (IL) to cover a photodiode (PH) in each of a plurality of areas (AR) on which each pixel to detect light of a different color is formed. After that, an opening part (OP) reaching the inside of the interlayer dielectric layer (IL) by passing through the liner film (LF1) is formed. Also, in each area (AR), the liner film (LF1) is formed to make the thickness of the liner film (LF1) different. The height position of the lower side of the opening part (OP) in the area with the liner film (LF1) of the thin thickness is lower than the height position of the lower side of the opening part (OP) in the area with the liner film (LF1) of the thick thickness.</p> |
