| 摘要 |
一种非挥发性记忆体之记忆胞，包括：一储存电晶体，具有一闸极结构、一第一掺杂区域以及一第二掺杂区域；以及一电阻性元件，具有一第一端连接于该第二掺杂区域；其中，该储存电晶体与该电阻性元件至少可被编程为一第一储存状态或者一第二储存状态，且该记忆胞具有一控制端连接至该闸极结构，一第一端连接至该第一掺杂区域以及一第二端连接至该电阻性元件的一第二端。; a resistive element having a first terminal connected to second doped region. The storage transistor and the resistive element are capable of being programmed to at least a first storing state or a second storing state. Also, the memory cell has a control terminal connected to the gate structure, a first terminal connected to the first doped region, and a second terminal connected to a second terminal of the resistive element. |
